Display panel having a storage capacitor and method of fabricating same

ABSTRACT

A display panel and a method of fabricating the same are provided. The display panel has an array substrate having a substrate, a thin film transistor unit and a storage capacitor disposed on the substrate; a light emitting device layer disposed on the array substrate. An orthographic projection of the storage capacitor projected on the light emitting device layer is located within the light emitting device layer.

FIELD OF DISCLOSURE

The present disclosure relates to displays, and more particularly to adisplay panel and a method of fabricating the same.

BACKGROUND OF DISCLOSURE

In flat panel display technologies, organic light-emitting diode (OLED)displays have many advantages, such as being light weight, thin, activeemitting, fast responding rates, wide viewing angles, wide color gamut,high brightness, low power consumption, etc, and have gradually become athird generation display technology after liquid crystal displays.

With development of the display panel, for bottom-emitting OLED displaypanels, existence of the switching units, thin film transistor units,and storage capacitors in array substrates lead to aperture ratiolimitations in pixel units, which can not meet current high-resolutiondisplay panels requirements.

Therefore, a display panel is required to solve the above problems.

SUMMARY OF DISCLOSURE

The present disclosure provides a display panel and a method offabricating the same so as to solve a technical problem that an apertureratio of the conventional display panel is relatively low.

In order to solve the above problem, the technical solutions provided bythe present disclosure are as follows:

The present disclosure provides a display panel comprising:

-   -   an array substrate comprising:        -   a substrate; and        -   a thin film transistor unit and a storage capacitor disposed            on the substrate; and    -   a light emitting device layer disposed on the array substrate,    -   wherein an orthographic projection of the storage capacitor        projected on the light emitting device layer is located within        the light emitting device layer.

In an display panel of the present disclosure, the storage capacitorcomprises:

-   -   a first electrode disposed on the substrate;    -   a first insulating layer disposed on the first electrode; and    -   a second electrode disposed on the first insulating layer,    -   wherein the first electrode and the second electrode are made of        a transparent metal material.

In an display panel of the present disclosure, the first insulatinglayer comprises Al₂O₃.

In an display panel of the present disclosure, the thin film transistorunit comprises:

-   -   a light shielding layer disposed on the substrate;    -   a buffering layer disposed on the light shielding layer;    -   an active layer disposed on the buffering layer;    -   a gate insulating layer disposed on the active layer;    -   a gate electrode layer disposed on the gate insulating layer;    -   an insulating interlayer disposed on the gate electrode layer;    -   a source/drain electrode layer disposed on the insulating        interlayer;    -   a passivation layer disposed on the source/drain electrode        layer;    -   a planarization layer disposed on the passivation layer; and    -   a pixel electrode layer disposed on the planarization layer,    -   wherein the first electrode and the active layer are disposed in        a same level;    -   wherein the first insulating layer and the insulating interlayer        are disposed in a same level; and    -   wherein the second electrode and the source/drain electrode        layer are formed in a same mask process, or the second electrode        and the pixel electrode layer are formed in a same mask process.

In an display panel of the present disclosure, the storage capacitorfurther comprises a third electrode, and the third electrode is made ofa transparent material, wherein:

-   -   when the second electrode and the source/drain electrode layer        are disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level; and    -   when the second electrode and the pixel electrode layer are        disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level, or the third        electrode and the source/drain electrode layer are disposed in a        same level.

The present disclosure further provides a method of fabricating adisplay panel, comprising:

-   -   providing a substrate;    -   forming a thin film transistor unit and a storage capacitor on        the substrate;    -   forming a light emitting device layer on the thin film        transistor unit and the storage capacitor, wherein an        orthographic projection of the storage capacitor projected on        the light emitting device layer is located within the light        emitting device layer.

In a fabricating method of the present disclosure, the storage capacitorcomprises:

-   -   a first electrode disposed on the substrate;    -   a first insulating layer disposed on the first electrode; and    -   a second electrode disposed on the first insulating layer,    -   wherein the first electrode and the second electrode are made of        a transparent metal material.

In a fabricating method of the present disclosure, the first insulatinglayer comprises Al₂O₃.

In a fabricating method of the present disclosure, the thin filmtransistor unit comprises:

-   -   a light shielding layer disposed on the substrate;    -   a buffering layer disposed on the light shielding layer;    -   an active layer disposed on the buffering layer;    -   a gate insulating layer disposed on the active layer;    -   a gate electrode layer disposed on the gate insulating layer;    -   an insulating interlayer disposed on the gate electrode layer;    -   a source/drain electrode layer disposed on the insulating        interlayer;    -   a passivation layer disposed on the source/drain electrode        layer;    -   a planarization layer disposed on the passivation layer; and    -   a pixel electrode layer disposed on the planarization layer,    -   wherein the first electrode and the active layer are disposed in        a same level;    -   wherein the first insulating layer and the insulating interlayer        are disposed in a same level; and    -   wherein the second electrode and the source/drain electrode        layer are formed in a same mask process, or the second electrode        and the pixel electrode layer are formed in a same mask process.

In a fabricating method of the present disclosure, the storage capacitorfurther comprises a third electrode, and the third electrode is made ofa transparent material, wherein:

-   -   when the second electrode and the source/drain electrode layer        are disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level; and    -   when the second electrode and the pixel electrode layer are        disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level, or the third        electrode and the source/drain electrode layer are disposed in a        same level.

The present disclosure further provides a display panel comprising:

-   -   an array substrate comprising:        -   a substrate; and        -   a thin film transistor unit and a storage capacitor disposed            on the substrate; and    -   a light emitting device layer disposed on the array substrate,    -   wherein an orthographic projection of the storage capacitor        projected on the light emitting device layer is located within        the light emitting device layer; and    -   wherein the storage capacitor comprises:        -   a first electrode disposed on the substrate;        -   a first insulating layer disposed on the first electrode;            and        -   a second electrode disposed on the first insulating layer,        -   wherein the first electrode and the second electrode are            made of a transparent metal material.

In an display panel of the present disclosure, the first insulatinglayer comprises Al₂O₃.

In an display panel of the present disclosure, the thin film transistorunit comprises:

-   -   a light shielding layer disposed on the substrate;    -   a buffering layer disposed on the light shielding layer;    -   an active layer disposed on the buffering layer;    -   a gate insulating layer disposed on the active layer;    -   a gate electrode layer disposed on the gate insulating layer;    -   an insulating interlayer disposed on the gate electrode layer;    -   a source/drain electrode layer disposed on the insulating        interlayer;    -   a passivation layer disposed on the source/drain electrode        layer;    -   a planarization layer disposed on the passivation layer; and    -   a pixel electrode layer disposed on the planarization layer,    -   wherein the first electrode and the active layer are disposed in        a same level;    -   wherein the first insulating layer and the insulating interlayer        are disposed in a same level; and    -   wherein the second electrode and the source/drain electrode        layer are formed in a same mask process, or the second electrode        and the pixel electrode layer are formed in a same mask process.

In an display panel of the present disclosure, the storage capacitorfurther comprises a third electrode, and the third electrode is made ofa transparent material, wherein:

-   -   when the second electrode and the source/drain electrode layer        are disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level; and    -   when the second electrode and the pixel electrode layer are        disposed in a same level, the third electrode and the gate        electrode layer are disposed in a same level, or the third        electrode and the source/drain electrode layer are disposed in a        same level.

Beneficial effects: in the present disclosure, a storage capacitorregion of the array substrate is fabricated using a transparent metalmaterial, and the light emitting device layer is disposed on the storagecapacitor, so as to improve an aperture ratio of the display panel andimprove a display effect of the display panel.

DESCRIPTION OF DRAWINGS

In order to more clearly describe embodiments of the present disclosureor technical solutions in a conventional technology, drawings requiredto be used for the embodiments or descriptions of the conventionaltechnology are simply described hereinafter. Apparently, the drawingsdescribed below only illustrate some embodiments of the presentdisclosure. Those skilled in the art can obtain other drawings based onthese drawings disclosed herein without creative effort.

FIG. 1 is a structural diagram of film layers of a display panel of thepresent disclosure;

FIG. 2 is a structural diagram of film layers of a display panel ofembodiment 1 of the present disclosure;

FIG. 3 is a structural diagram of film layers of a display panel ofembodiment 2 of the present disclosure;

FIG. 4 is a structural diagram of film layers of a display panel ofembodiment 3 of the present disclosure;

FIG. 5 is a flow chart of a method of fabricating a display panel of thepresent disclosure;

FIG. 6 is another flow chart of a method of fabricating a display panelof the present disclosure;

FIGS. 7A-7D are flow charts of a method of fabricating a display panelof the present disclosure; and

FIG. 8 is a structural diagram of another type of film layers of adisplay panel of the present disclosure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The following description of each of the embodiments with reference tothe appended drawings is used for illustrating specific embodimentswhich may be used for carrying out the present disclosure. Thedirectional terms described by the present disclosure, such as “upper”,“lower”, “front”, “back”, “left”, “right”, “inner”, “outer”, “side”,etc., are only directions by referring to the accompanying drawings.Thus, the used directional terms are used to describe and understand thepresent disclosure, but the present disclosure is not limited thereto.In figures, elements with similar structures are indicated by the samenumbers.

FIG. 1 shows a structural diagram of film layers of a display panel ofthe disclosure. The display panel includes an array substrate. The arraysubstrate includes a substrate 101, a thin film transistor layerdisposed on the substrate 101, and a light emitting device layer 40disposed on the thin film transistor layer. The thin film transistorlayer includes a thin film transistor unit 10, a storage capacitor 20,and a switching unit 30, where an orthographic projection of the storagecapacitor 20 projected on the light emitting device layer 40 is locatedwithin the light emitting device layer 40.

In the present embodiment, the switching unit 30 in FIG. 1 is notspecifically introduced.

As shown in FIG. 2, original material of the substrate 101 can be one ofa glass substrate, a quartz substrate, a resin substrate, and the like.Further, when the array substrate is a flexible substrate, material ofthe array substrate can optionally be an organic polymer. In oneembodiment, the flexible material can be a polyimide thin film.

The thin film transistor unit 10 includes an etch step layer (ESL) typestructure, a back channel etch type (BCE) structure, or a top gate thinfilm transistor type (top-gate) structure, which is not particularlylimited. For example, the top gate thin film transistor type includes alight shielding layer 102, a buffering layer 103, an active layer 104, agate insulating layer 105, a gate electrode layer 106, an insulatinginterlayer 107, a source/drain layer 108, a passivation layer 109, andplanarization layer.

The light shielding layer 102 is formed on the substrate 101, which ismainly used to shield light from entering the thin film transistor unit10 so as to affect a driving effect of thin film transistor.

The buffering layer 103 is formed on the light shielding layer 102,which is mainly used to buffer stress between thin film structures andalso have a certain effect of blocking water and oxygen.

The active layer 104 is formed on the buffering layer 103. The activelayer 104 includes doped regions formed by ion doping (not shown). Theactive layer is made of indium gallium zinc oxide (IGZO), i.e., aconductive semiconductor, and is also a transparent material.

The gate insulating layer 105 is formed on the active layer 104. In oneembodiment, the insulating interlayer 107 covers the active layer 104.The insulating interlayer 107 is used to separate the active layer 104from other metal layers.

The gate electrode layer 106 is formed on the gate insulating layer 105.Metal material of the gate electrode layer 105 can be generally metalssuch as molybdenum, aluminum, an aluminum-nickel alloy, amolybdenum-tungsten alloy, chromium, or copper, or a combination ofseveral metal materials described above. In an embodiment, the metalmaterial of the gate layer 106 can be molybdenum.

The insulating interlayer 107 is formed on the gate electrode layer 106.In one embodiment, the insulating interlayer 107 covers the gateelectrode layer 106. The gate insulating layer 105 is used to separatethe gate electrode layer 106 from the source/drain electrode layer 108.

The source/drain electrode layer 108 is formed on the insulatinginterlayer 107. Metal material of the source/drain electrode layer 108can be generally metals such as molybdenum, aluminum, an aluminum-nickelalloy, a molybdenum-tungsten alloy, chromium, copper, a titaniumaluminum alloy, or a combination of several metal materials describedabove. The source/drain electrode layer 108 are electrically connectedto the doped regions on the active layer 104 through via holes.

The passivation layer 109 and the planarization layer 110 are formed onthe source/drain electrode layer 108. The passivation layer 109 is usedto ensure flatness of the process of the thin film transistor.

The light emitting device layer includes a pixel electrode layer 111(i.e., an anode layer 111), a light emitting layer 112, and a cathodelayer 113 formed on the array substrate.

The pixel electrode layer 111 is formed on the planarization layer 110.The pixel electrode layer 111 is mainly used to provide holes forabsorbing electrons.

In one embodiment, the light emitting device (OLED) is a bottom emissiontype OLED device, and thus the pixel electrode layer 111 is atransparent metal electrode.

In one embodiment, material of the anode layer 111 can be selected fromat least one of indium tin oxide (ITO), indium zinc oxide (IZO), zincoxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), oraluminum zinc oxide (AZO).

The light emitting layer 112 is formed on the anode layer 111, and thelight emitting layer 112 is divided into a plurality of light emittingunits by the pixel defining layer 114, and each of the light emittingunits corresponds to one of the anodes. The holes generated by the anodelayer 111 absorb electrons generated by the cathode layer 113, and alight source is generated in the light emitting layer 112.

The cathode layer 113 is formed on the light emitting layer 112. Thecathode layer 113 covers the light emitting layer 112 and the pixeldefining layer 112 on the array substrate. In one embodiment, thecathode layer 113 is a non-transparent material, and light generated bythe light emitting layer 112 is projected through the cathode layer 113toward the substrate 101.

As shown in FIG. 2, the storage capacitor 20 includes a first electrode115 disposed on the substrate 101, a first insulating layer 116 disposedon the first electrode 115, and a second electrode 117 disposed on thefirst insulating layer 116.

In one embodiment, the first electrode 115 and the active layer 104 aredisposed in a same level, i.e., the first electrode 115 and the activelayer 104 are formed in a same mask process. Since the first electrode115 and the active layer 104 are made of the same material, the firstelectrode 115 in this embodiment is a transparent electrode. Similarly,the first insulating layer 116 and the interlayer insulating layer 107are disposed in a same level.

As shown in FIG. 2, the second electrode 117 and the source/drainelectrode layer 108 are disposed in a same level. In the embodiment, thesource/drain electrode layer 108 and the second electrode 117 are madeof a transparent metal material. Alternatively, the source/drainelectrode layer 108 and the second electrode 117 are fabricated by twoprocesses, which are a transparent metal material and a non-transparentmetal material, respectively.

As shown in FIG. 3, the second electrode 117 and the pixel electrodelayer 111 can be disposed in a same level.

Referring to FIG. 2 and FIG. 3, the first insulating layer 116 is usedas a etch stop layer to cover the first electrode 115, so as to preventthe second electrode 117 from being damaged by a following etchingprocess. In one embodiment, the first insulating layer 113 comprisesAl₂O₃.

In an embodiment, material of the insulating interlayer 107 can bealuminum oxide (Al₂O₃). The high compactness of the aluminum oxidepreferably prevents the active layer 104, the gate insulating layer 105,and the gate electrode layer 106 from being destroyed during etching. Inaddition, the aluminum oxide has a high electrostatic force constant(K). When an area and a pitch of the two electrode plates are constant,the electrostatic force constant is improved, and the total amount ofthe storage capacitor 20 is improved.

In one embodiment, the storage capacitor 20 further comprises a thirdelectrode 118.

When the second electrode 117 and the source/drain electrode layer 108are disposed in a same level, the third electrode 118 and the gateelectrode layer 106 are disposed in a same level. When the secondelectrode 117 and the pixel electrode layer 111 are disposed in a samelevel, the third electrode 118 and the gate electrode layer 106 aredisposed in a same level, or the third electrode 118 and thesource/drain electrode layer 108 are disposed in a same level.

As shown in FIG. 4, when the second electrode 117 and the source/drainelectrode layer 108 are disposed in a same level, the third electrode118 and the gate electrode layer 106 are disposed in a same level.Compared with FIG. 2 or FIG. 3, three parallel connected capacitorsincrease a total charge of the storage capacitor 20.

In one embodiment, the first electrode 115, the second electrode 117, orthe third electrode 118 forms the storage capacitor 20, and the firstelectrode 115, the second electrode 117, and the third electrode 118 aretransparent electrodes. An orthographic projection of the firstelectrode 115, the second electrode 117 or the third electrode 118projected on the light emitting device layer 40 is located within thelight emitting device layer 40. Under the requirement of high-resolutionpanel for high capacitance, the transparent setting of the storagecapacitor improves an aperture ratio of the display panel and improvesthe display effect of the display panel.

FIG. 5 shows a method of fabricating a display panel of the presentdisclosure, which includes:

Step S10: providing a substrate:

In the present embodiment, original material of the substrate 201 can beone of a glass substrate, a quartz substrate, a resin substrate, and thelike. Further, when the array substrate is a flexible substrate,material of the array substrate can optionally be an organic polymer. Inone embodiment, the flexible material can be a polyimide thin film.

Step S20: forming a thin film transistor unit and a storage capacitor onthe substrate:

In the present step, the thin film transistor unit, the storagecapacitor, and the switching unit of the display panel aresimultaneously formed on the substrate 201. The switching unit in oneembodiment is not specifically introduced.

As shown in FIG. 6, steps are specifically included:

Step S201: forming a light shielding layer, a buffering layer, and anactive layer on the substrate:

As shown in FIG. 7A, a first metal layer is deposited on the substrate201 and is patterned to form a light shielding layer 202 of the thinfilm transistor unit and a first electrode 210 of the storage capacitor.

In one embodiment, metal material of the first metal layer can bemolybdenum.

The buffering layer 203 covers the light shielding layer 202. Thebuffering layer 203 is mainly used to buffer stress between thin filmstructures and also have a certain effect of blocking water and oxygen.

First, an active layer thin film is formed on the buffering layer 203,and the active layer thin film is made of polysilicon. After using afirst mask process on the active layer thin film, forming a firstphotoresist layer (not shown) on the active layer thin film, exposingwith a mask (not shown), developing, and a first etching patternprocessing, the active layer thin film forms the active layer 204 andthe first electrode 215 as shown in FIG. 7A, and the first photoresistlayer is peeled off.

The first electrode 215 and the active layer 204 are disposed in a samelevel. The active layer 204 is made of indium gallium zinc oxide (IGZO),i.e., a conductive semiconductor, and is also a transparent material.

Step S202: forming a gate insulating layer, a gate electrode layer, andan insulating interlayer on the active layer:

In the present step, a gate insulating layer 205 and a second metallayer are formed on the active layer 204 in sequence. Metal material ofthe second metal layer can be generally metals such as molybdenum,aluminum, an aluminum-nickel alloy, a molybdenum-tungsten alloy,chromium, or copper, or a combination of several metal materialsdescribed above. In an embodiment, the metal material of the secondmetal layer can be molybdenum.

After using a second mask process for the gate electrode layer, forminga second photoresist layer on the second metal layer, using a mask forshown) for exposing, developing, and a second etching patternprocessing, the gate electrode layer and the gate insulating layer areformed in a pattern as shown in FIG. 7B, and the second photoresistlayer is peeled off.

The gate insulating layer 205 and the gate electrode layer 206 can beformed in a mask process, that is, the pattern shown in FIG. 7B isformed.

An insulating interlayer 207 is deposited to separate the gate electrodelayer 206 from the source/drain electrode layer 208. In one embodiment,the insulating interlayer 207 is made of Al₂O₃.

The first insulating layer 216 and the insulating interlayer 207 aredisposed in a same level, i.e., the first insulating layer 216 is alsomade of aluminum oxide (Al₂O₃). The high compactness of the aluminumoxide preferably prevents the active layer 204, the gate insulatinglayer 205, and the gate electrode layer 206 from being destroyed duringetching. In addition, the aluminum oxide has a high electrostatic forceconstant (K). When an area and a pitch of the two electrode plates areconstant, the electrostatic force constant is improved, and the totalamount of the storage capacitor 20 is improved.

Step S203: forming a source/drain electrode layer, a second electrode, apassivation layer, and a planarization layer on the gate electrode layerin sequence:

As shown in FIG. 7C, the source/drain electrode layer 208 is formed onthe insulating interlayer 207. Metal material of the source/drainelectrode layer 208 can be generally metals such as molybdenum,aluminum, an aluminum-nickel alloy, a molybdenum-tungsten alloy,chromium, copper, a titanium aluminum alloy, or a combination of severalmetal materials described above. The source/drain electrode layer 208are electrically connected to the doped regions on the active layer 204through via holes.

The second electrode 217 of the storage capacitor 20 is simultaneouslyformed when the source/drain electrode layer 208 is formed. In oneembodiment, the second electrode 217 and the source/drain electrodelayer 208 are transparent metals. Alternatively, the source/drainelectrode layer 208 and the second electrode 217 are fabricated by twoprocesses, which are a transparent metal material and a non-transparentmetal material, respectively.

The passivation layer 209 and the planarization layer 210 are formed onthe source/drain electrode layer 208. The passivation layer 209 and theplanarization layer 210 are used to ensure flatness of the process ofthe thin film transistor.

Step S30: forming an organic light emitting layer on the thin filmtransistor unit and the storage capacitor:

The light emitting device layer 40 includes a pixel electrode layer 211(i.e., an anode layer 111), a light emitting layer 212, and a cathodelayer 213 formed on the array substrate.

The pixel electrode layer 211 is formed on the planarization layer 210.The pixel electrode layer 211 is mainly used to provide holes forabsorbing electrons. In one embodiment, the light emitting device (OLED)is a bottom emission type OLED device, and thus the pixel electrodelayer 211 is a transparent metal electrode.

In one embodiment, material of the anode layer 211 can be selected fromat least one of indium tin oxide (ITO), indium zinc oxide (IZO), zincoxide (ZnO), indium oxide (In₂O₃), indium gallium oxide (IGO), oraluminum zinc oxide (AZO).

The light emitting layer 212 is formed on the anode layer 211, and thelight emitting layer 212 is divided into a plurality of light emittingunits by the pixel defining layer 214, and each of the light emittingunits corresponds to one of the anodes. The holes generated by the anodelayer 211 absorb electrons generated by the cathode layer 213, and alight source is generated in the light emitting layer 212.

The cathode layer 213 is formed on the light emitting layer 212. Thecathode layer 213 covers the light emitting layer 212 and the pixeldefining layer 212 on the array substrate. In one embodiment, thecathode layer 213 is a non-transparent material, and light generated bythe light emitting layer 212 is projected through the cathode layer 213toward the substrate 201.

In one embodiment, the light emitting device layer 10 covers the storagecapacitor 20, i.e., an orthographic projection of the first electrode215 and the second electrode 117 projected on the light emitting devicelayer 40 is located within the light emitting device layer 40.

As shown in FIG. 7D, the second electrode 217 and the pixel electrodelayer 211 can be formed in a same mask process. Although the storagecapacitor 20 is not covered by the light emitting device layer 40, lightemitted from the light emitting device layer 40 can emit through thestorage capacitor 20, which improves the aperture ratio of the displaypanel.

In one embodiment, the storage capacitor 20 further comprises a thirdelectrode 218.

It means that, when the second electrode 217 and the source/drainelectrode layer 208 are disposed in a same level, the third electrode218 and the gate electrode layer 206 are disposed in a same level. Whenthe second electrode 217 and the pixel electrode layer 211 are disposedin a same level, the third electrode 218 and the gate electrode layer206 are disposed in a same level, or the third electrode 218 and thesource/drain electrode layer 208 are disposed in a same level.

As shown in FIG. 8, when the second electrode 217 and the source/drainelectrode layer 208 are disposed in a same level, the third electrode218 and the gate electrode layer 206 are disposed in a same level.Compared with FIG. 2 or FIG. 3, three parallel connected capacitorsincrease a total charge of the storage capacitor 20.

The present disclosure provides a display panel and a method offabricating the same. The display panel has an array substrate having asubstrate, a thin film transistor unit and a storage capacitor disposedon the substrate; a light emitting device layer disposed on the arraysubstrate. An orthographic projection of the storage capacitor projectedon the light emitting device layer is located within the light emittingdevice layer. In the present disclosure, a storage capacitor region ofthe array substrate is fabricated using a transparent metal material,and the light emitting device layer is disposed on the storagecapacitor, so as to improve an aperture ratio of the display panel andimprove a display effect of the display panel.

As described above, although the present disclosure has been describedin preferred embodiments, they are not intended to limit the disclosure.One of ordinary skill in the art, without departing from the spirit andscope of the disclosure within, can make various modifications andvariations, so the range of the scope of the disclosure is defined bythe claims.

The invention claimed is:
 1. A display panel, comprising: an arraysubstrate comprising: a substrate; and a thin film transistor unit and astorage capacitor disposed on the substrate, wherein the storagecapacitor comprises: a first electrode disposed on the substrate; afirst insulating layer disposed on the first electrode; and a secondelectrode disposed on the first insulating layer, wherein the firstelectrode and the second electrode are made of a transparent metalmaterial; and wherein the thin film transistor unit comprises: a lightshielding layer disposed on the substrate; a buffering layer disposed onthe light shielding layer; an active layer disposed on the bufferinglayer; a gate insulating layer disposed on the active layer; a gateelectrode layer disposed on the gate insulating layer; an insulatinginterlayer disposed on the gate electrode layer; a source/drainelectrode layer disposed on the insulating interlayer; a passivationlayer disposed on the source/drain electrode layer; a planarizationlayer disposed on the passivation layer; and a pixel electrode layerdisposed on the planarization layer, wherein the first electrode and theactive layer are disposed in a same level; wherein the first insulatinglayer and the insulating interlayer are disposed in a same level; andwherein the second electrode and the source/drain electrode layer areformed in a same mask process, or the second electrode and the pixelelectrode layer are formed in a same mask process; and a light emittingdevice layer disposed on the array substrate, wherein an orthographicprojection of the storage capacitor projected on the light emittingdevice layer is located within the light emitting device layer.
 2. Thedisplay panel according to claim 1, wherein the first insulating layercomprises Al₂O₃.
 3. The display panel according to claim 1, wherein thestorage capacitor further comprises a third electrode, and the thirdelectrode is made of a transparent material, wherein: when the secondelectrode and the source/drain electrode layer are disposed in a samelevel, the third electrode and the gate electrode layer are disposed ina same level; and when the second electrode and the pixel electrodelayer are disposed in a same level, the third electrode and the gateelectrode layer are disposed in a same level, or the third electrode andthe source/drain electrode layer are disposed in a same level.
 4. Amethod of fabricating a display panel, comprising: providing asubstrate; forming a thin film transistor unit and a storage capacitoron the substrate, wherein the storage capacitor comprises: a firstelectrode disposed on the substrate; a first insulating layer disposedon the first electrode; and a second electrode disposed on the firstinsulating layer, wherein the first electrode and the second electrodeare made of a transparent metal material; and wherein the thin filmtransistor unit comprises: a light shielding layer disposed on thesubstrate; a buffering layer disposed on the light shielding layer; anactive layer disposed on the buffering layer; a gate insulating layerdisposed on the active layer; a gate electrode layer disposed on thegate insulating layer; an insulating interlayer disposed on the gateelectrode layer; a source/drain electrode layer disposed on theinsulating interlayer; a passivation layer disposed on the source/drainelectrode layer; a planarization layer disposed on the passivationlayer; and a pixel electrode layer disposed on the planarization layer,wherein the first electrode and the active layer are disposed in a samelevel; wherein the first insulating layer and the insulating interlayerare disposed in a same level; and wherein the second electrode and thesource/drain electrode layer are formed in a same mask process, or thesecond electrode and the pixel electrode layer are formed in a same maskprocess; and forming a light emitting device layer on the thin filmtransistor unit and the storage capacitor, wherein an orthographicprojection of the storage capacitor projected on the light emittingdevice layer is located within the light emitting device layer.
 5. Themethod of fabricating the display panel according to claim 4, whereinthe first insulating layer comprises Al₂O₃.
 6. The method of fabricatingthe display panel according to claim 4, wherein the storage capacitorfurther comprises a third electrode, and the third electrode is made ofa transparent material, wherein: when the second electrode and thesource/drain electrode layer are disposed in a same level, the thirdelectrode and the gate electrode layer are disposed in a same level; andwhen the second electrode and the pixel electrode layer are disposed ina same level, the third electrode and the gate electrode layer aredisposed in a same level, or the third electrode and the source/drainelectrode layer are disposed in a same level.